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Oral presentation

Generation of xenon $$K_alpha$$ lines with laser plasma interation

Hayashi, Yukio; Pirozhkov, A. S.; Fukuda, Yuji; Kando, Masaki; Faenov, A. Y.; Kawase, Keigo; Pikuz, T. A.*; Bulanov, S. V.

no journal, , 

no abstracts in English

Oral presentation

Positron annihilation study on vacancy-type defects in MBE-grown GaCrN films, 2

Yabuuchi, Atsushi; Maekawa, Masaki; Kawasuso, Atsuo; Hasegawa, Shigehiko*; Zhou, Y.*; Asahi, Hajime*

no journal, , 

no abstracts in English

Oral presentation

Evaluation of ZnO fast scintillator spatial resolution using the FZP-focused EUV laser

Nakazato, Tomoharu*; Shimizu, Toshihiko*; Yamanoi, Kohei*; Sakai, Kohei*; Sarukura, Nobuhiko*; Ehrentraut, D.*; Fukuda, Tsuguo*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi*; et al.

no journal, , 

no abstracts in English

Oral presentation

Low temperature ion channeling at interface of iron Heusler alloy films/Ge(111)

Matsukura, Bui*; Nakajima, Takahito*; Maeda, Yoshihito; Narumi, Kazumasa; Terai, Yoshikazu*; Sado, Taizo*; Hamaya, Kohei*; Miyao, Masanobu*

no journal, , 

no abstracts in English

Oral presentation

Effect of substrate pre-treatment on the fabrication of iron silicide thin film utilizing low-energy ion beam

Yamaguchi, Kenji; Hojo, Kiichi

no journal, , 

no abstracts in English

Oral presentation

A Study on reduction of heavy-ion induced current in SOI device

Takeyasu, Hidenori*; Okazaki, Yuji*; Ogura, Shunta*; Otani, Takumi*; Takahashi, Yoshihiro*; Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Difference of soft error rates in Bulk/SOI SRAM using high energy nuclear probes

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

no journal, , 

no abstracts in English

Oral presentation

Observation of the metal surface irradiated with the focused soft X-ray laser pulse

Ishino, Masahiko; Faenov, A. Y.*; Tanaka, Momoko; Tamotsu, Satoshi*; Kawachi, Tetsuya; Inogamov, N. A.*; Pikuz, T. A.*; Oba, Toshiyuki; Kaihori, Takeshi; Khokhlov, V.*; et al.

no journal, , 

no abstracts in English

Oral presentation

Fluence dependence of local electrical conductivities in SiC irradiated with femtosecond laser

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Radiation resistance of Al-doped 4H-SiC epilayer to 200keV electron irradiation

Nojiri, Takunori*; Nishino, Kozo*; Yanagisawa, Hideki*; Matsuura, Hideharu*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Oral presentation

The Importance of quantum beams for advances in materials science

Mizuki, Junichiro

no journal, , 

The talk will be given in the symposium titled "advances in quantum beam application to materials science" at the 71st Meeting of Applied Physical Society of Japan. The talk focuses on the complemental use of synchrotron X-rays and neutrons for material science researches. The key words of the material science research in future direction are "in situ observation", "materials in real world", and "dynamics". I will address how quantum beams can contribute to these researches in materials science.

Oral presentation

Epitaxial growth of graphene on magnetic metal thin films

Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Sakai, Seiji

no journal, , 

no abstracts in English

Oral presentation

Cryogenically-cooled 100-mJ Yb:YLF chirped-pulse regenerative amplification system

Ogawa, Kanade; Akahane, Yutaka; Yamakawa, Koichi

no journal, , 

By using a modern highpower Yb-doped solid-state CPA lasers as a pump source for OPCPA, it will open a new route to the generation of intense few-cycle pulses with high repetition rates. We obtained 100 mJ of pulse energy with cryogenically cooled Yb:YLF CPA laser system at 10 Hz repetition rates.

Oral presentation

Study of structure fluctuation during molecular beam epitaxial growth using X-ray

Takahashi, Masamitsu

no journal, , 

Recently, as the partially coherent X-rays from the third-generation synchrotron light source become available, photon correlation spectroscopy in the X-ray region has been developed. This technique is suitable for the investigation of the surface dynamics during molecular-beam epitaxy (MBE). In this work, we have explored the possibility of X-ray photon correlation spectroscopy during molecular-beam epitaxial growth of III-V group semiconductors. The dynamics of the exchange of atoms at the solid-vapor interface is important not only to understand the elemental processes of crystal growth but also to enhance the accuracy of the numerical simulations of MBE.

Oral presentation

Effects of electron irradiation induced defects on the transient charge collections of SiC diodes

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Observation of Fe-As compound thin film on GaAs(001) by in-plane X-ray diffraction

Fujikawa, Seiji; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Frontiers of neutron beam technologies

Kakurai, Kazuhisa

no journal, , 

no abstracts in English

Oral presentation

Evaluation of the new Li-scintillator used thermal neutron radiography and the optional brightness-up sheet

Iikura, Hiroshi; Tsutsui, Noriaki*; Nakamura, Tatsuya; Katagiri, Masaki*; Kureta, Masatoshi; Kubo, Jun*; Matsubayashi, Masahito

no journal, , 

Japan Atomic Energy Agency has developed the neutron scintillator jointly with Chichibu Fuji Co., Ltd. In this study, we evaluated the new $$^{6}$$LiF/ZnS scintillator developed for neutron imaging. It was confirmed that brightness becomes light about 3 times while maintaining the equal performance for the spatial resolution compared with the conventional product. When high frame rate imaging was performed using high-speed-imaging system and this scintillator, it became possible to image beyond 10,000 frames per second while having enough brightness. This technique enabled us to get real-time imaging of behavior of oil in automobile engine accurately.

Oral presentation

Real-time SR photoelectron-spectroscopy measurement of low-temperature graphitization of a SiC thin film on Si substrates under ULP oxygen ambient

Imaizumi, Kei*; Takahashi, Ryota*; Handa, Hiroyuki*; Saito, Eiji*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

We found that an SiC surface changed to a graphene film even at 1273 K in the oxygen gas ambient. As subsequent experiments, real-time photoelectron spectroscopy using synchrotron radiation was applied to observe the graphene formation process in the ultra low pressure oxygen ambient. The 3C-SiC(111) surface, formed on the Si(111) surface using monomethylsilane, was used as a substrate. The real-time photoelectron spectroscopy was performed at BL23SU in the SPring-8. With increasing reaction time, a C1s photoelectron peak originated from sp$$^{2}$$ carbon increased. It reveals that a graphene film is formed on the SiC surface.

32 (Records 1-20 displayed on this page)